Lifetime spectroscopy and hydrogenation of chromium in n- and p- type Cz silicon

The defect parameters of isolated Cri and chromium-boron (CrB) pairs are reassessed by conducting lifetime spectroscopy on both nand p-type, Cr-doped silicon samples with different doping levels, and fitting the lifetimes with the Shockley-Read-Hall (SRH) model. The uncertainty ranges of the parameters are significantly tightened through a combined analysis of the two defects with the lifetime data measured on both nand p-type samples. Both the experimental data and the modelling results suggest that Cri has a greater negative impact on lifetimes in p-Si than n-Si. The possible hydrogen passivation of Cri in nand pSi is then investigated both through charge state modelling and experimentally. A general occupancy factor is applied to predict the charge states of both monovalent Cri and multivalent H as a function of temperature and injection level. The modelling results suggest that above 800K, both the injection and the doping become unimportant as silicon becomes intrinsic. However, despite some positive hints, the experimental evidence for hydrogenation of Cri is inconclusive at this stage. © 2015 The Authors. Published by Elsevier Ltd. Peer review by the scientific conference committee of SiliconPV 2015 under responsibility of PSE AG.